Improved the Performance of the Dual Port Pump Laser for Raman Amplifiers

Confirmed the operation at two different wavelengths and a consistent optical output power of 500mW from each port.

Furukawa Electric Co., Ltd. (Head office: 2-6-4 Otemachi, Chiyoda-ku, Tokyo; President: Hideya Moridaira) successfully improved the performance of the dual port pump laser for Raman amplifiers that is used as the pump laser for Raman amplifiers with high output and low power consumption.

• Improved the performance of the dual port pump laser for Raman amplifiers
• Possible to freely select the wavelength and optical output power of each port, thereby increasing the flexibility when designing Raman amplifiers
• Will exhibit the new product at OFC 2024 scheduled to be held in the United States and plan to start mass production during the first half of FY2025

Background

Following the recent appearance of generative AI (Artificial intelligence) and machine learning, data traffic at data centers and other locations has exploded globally, and it is expected to grow further in the future. In response to this situation, communications speed needs to be increased, but there is the issue of decreased transmission distance due to degradation of the OSNR (Note 1) on the signal receiving side. When existing communications systems are used at faster speeds, the role of the Raman amplifier, which can amplify optical output power without attenuation of the signal light quality, is becoming more important. Also, because the bandwidth of the signal expands as a result of high-speed transmission, it is necessary to expand the bandwidth to enable high-volume transmission. Thus, Raman amplifiers need to have the flexibility to amplify the light source at a discretionary range based on the selection of the pump laser wavelength. On the other hand, with consideration for the expansion into the S-, C- and L-band in the future, the number of pump lasers will increase, so it will be more important for them to have small size, high output power and low power consumption.

Details

The newly developed dual port pump laser for Raman amplifiers confirmed the operation at two different wavelengths (Fig. 2) and consistent optical output power of 500mW (Fig. 3) from each port. With these advances, it is possible to freely select the wavelength and optical output power of the two ports, thereby increasing the flexibility when designing Raman amplifiers. Also, the smaller size of the high-output pump laser contributes to reducing the size of the Raman amplifier and overall system.

The successful advances to the dual port pump laser for Raman amplifiers (patented) use our high-accuracy fiber coupling technology and optical semiconductor processing technology using InP (Note 2) semiconductor materials developed over the past 25 years, as well as the application of our unique low loss, high-efficiency semiconductor laser chip structure.

We will exhibit this new product at OFC 2024 scheduled to be held on March 26-28, 2024, in San Diego (OFS Booth #2041). In addition, we plan to begin shipping samples from July 2024 and start mass production during the first half of FY2025.

OFC 2024: http://www.ofcconference.org/en-us/home/

The current development partially applies the achievement realized as part of the National Institute of Information and Communications Technology (NICT) commissioned research “Beyond 5G – Development of extended range optical node technology for realizing ultra-high speed, large volume networks” (Key issues 045).

Going forward, we will continue to develop high-output, low-power consumption laser chip technology and contribute to accelerated reductions in module power consumption and the establishment of environmentally friendly networks.

Fig. 1 Module concept. Fig. 2 Spectral characteristics. Fig. 3 Power output curve

(Note 1) OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio

(Note 2) InP (Indium Phosphide): A III-V compound semiconductor that is used for the manufacture of laser diode chips and high-speed transistors

Related News Release

Achieved 800mW output with a pump laser for C-band Raman amplifiers
http://www.furukawa.co.jp/en/release/2022/comm_20221018.html

Development of a new pump laser for high output power, low power consumption Raman amplifiers by expanding the range of the FRL1441U Series to support the S-band and L-band
http://www.furukawa.co.jp/en/release/2023/comm_20230302-2.html

Development of a high output, low power consumption, small S-,C-,L-band dual port pump laser for Raman amplifiers
http://www.furukawa.co.jp/en/release/2023/comm_20230929.html

About Furukawa Electric

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FEC PR Contact
Murakoshi, Public Relations Department
Furukawa Electric Co., Ltd.
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